The devices have a 100 A gate oxide and have been processed with a 0.8/zm technology. ... The devices were characterized using DC I-V and a modified charge pumping technique . ... trapped holes, and the subsequent source-side channel hot-carrier injection causes nearly complete neutralization of the trapped holes, anbsp;...
|Title||:||1995 International Symposium on VLSI Technology, Systems, and Applications|
|Author||:||Kung yeh chi shu yen chiu yüan|
|Publisher||:||IEEE - 1995|