This book presents high-/mixed-voltage analog and radio frequency (RF) circuit techniques for developing low-cost multistandard wireless receivers in nm-length CMOS processes. Key benefits of high-/mixed-voltage RF and analog CMOS circuits are explained, state-of-the-art examples are studied, and circuit solutions before and after voltage-conscious design are compared. Three real design examples are included, which demonstrate the feasibility of high-/mixed-voltage circuit techniques. Provides a valuable summary and real case studies of the state-of-the-art in high-/mixed-voltage circuits and systems; Includes novel high-/mixed-voltage analog and RF circuit techniques a from concept to practice; Describes the first high-voltage-enabled mobile-TVRF front-end in 90nm CMOS and the first mixed-voltage full-band mobile-TV Receiver in 65nm CMOS; Demonstrates the feasibility of high-/mixed-voltage circuit techniques with real design examples.P.-I. Mak and R. P. Martins, aDesign of an ESD-Protected Ultra-Wideband LNA in Nanoscale CMOS for Full-Band Mobile TV Tuners, a IEEE Transactions on Circuits and Systems a I: Regular Papers, vol. 56, no. 5, pp. 933a942, May 2009.
|Title||:||High-/Mixed-Voltage Analog and RF Circuit Techniques for Nanoscale CMOS|
|Author||:||Pui-In Mak, Rui Paulo Martins|
|Publisher||:||Springer Science & Business Media - 2012-03-20|