The III-V nitrides have proved to be good materials for optoelectronic and electronic devices due to their large bandgaps, high breakdown voltages, and high carrier velocities. To further improve the device performance for outdoor lighting and wireless communication, it is essential that ohmic contacts with very low contact resistance be developed. The selective area growth (SAG) utilizing tunneling effect has been the most promising approach to obtaining the desired low resistance. However, there have been a number of problems, such as the desorption of GaN and diffusion of dopants.temperature: (a) 950 AdC, (b) 970 AdC and (c) 990 AdC 30 3.8 The electron mobility of GaN films with various Ga cell temperature : (a) 950 AdC, (b) 970 AdC and (c) 990 AdC 32 3.9 X-ray pole figure of GaN (102) peak 34 4.1 The schematic diagram ofanbsp;...
|Title||:||Investigation of Ohmic Contacts for Gallium Nitride-based Power Electronic Devices Using Molecular Beam Epitaxy|
|Publisher||:||ProQuest - 2008|