This is the first book dedicated to the next generation of MOSFET models. Addressed to circuit designers with an in-depth treatment that appeals to device specialists, the book presents a fresh view of compact modeling, having completely abandoned the regional modeling approach.Both an overview of the basic physics theory required to build compact MOSFET models and a unified treatment of inversion-charge and surface-potential models are provided. The needs of digital, analog and RF designers as regards the availability of simple equations for circuit designs are taken into account. Compact expressions for hand analysis or for automatic synthesis, valid in all operating regions, are presented throughout the book. All the main expressions for computer simulation used in the new generation compact models are derived.Since designers in advanced technologies are increasingly concerned with fluctuations, the modeling of fluctuations is strongly emphasized. A unified approach for both space (matching) and time (noise) fluctuations is introduced.MOSFET MODELING FOR CIRCUIT ANALYSIS AND DESIGN by Galup-Montoro and Schneider 290 weak inversion and saturation, ca 3/3 0.58 jj a . ... 2nd ed., McGraw-Hill, Boston, 1999  William Liu, MOSFET Models for SPICE Simulation including BSIM3v3 and BSIM4, ... [Online]. Available: http://www.semiconductors. philips.com/Philips_Models/  Mehran Bagheri and Yannis Tsividis, aA small signal dc-to-high-frequency nonquasistatic model for the four-terminal MOSFET validanbsp;...
|Title||:||MOSFET Modeling for Circuit Analysis and Design|
|Author||:||Carlos Galup-Montoro, Márcio Cherem Schneider|
|Publisher||:||World Scientific - 2007|