This book provides analysis and discusses the design of various MOSFET technologies which are used for the design of Double-Pole Four-Throw (DP4T) RF switches for next generation communication systems. The authors discuss the design of the (DP4T) RF switch by using the Double-Gate (DG) MOSFET, as well as the Cylindrical Surrounding double-gate (CSDG) MOSFET. The effect of HFO2 (high dielectric material) in the design of DG MOSFET and CSDG MOSFET is also explored. Coverage includes comparison of Single-gate MOSFET and Double-gate MOSFET switching parameters, as well as testing of MOSFETs parameters using image acquisition.O. Moldovan, D. Jimenez, J. Guitart, F. A. Chaves, and B. Iniguez, aExplicit analytical charge and ... introduction of new materials and structural changes to improve MOSFET performance, a IEEE Circuits and Devices Magazine, vol. 21, no . 1, pp.
|Title||:||MOSFET Technologies for Double-Pole Four-Throw Radio-Frequency Switch|
|Author||:||Viranjay M. Srivastava, Ghanshyam Singh|
|Publisher||:||Springer Science & Business Media - 2013-10-07|