Accurate on-wafer characterization of CMOS transistors at extremely high frequencies, e.g. above 60GHz, becomes critical for RFIC designs and CMOS technology development for millimeter wave applications. Traditional two-step error calibration lumps the linear systematic errors as a four-port error adaptor between the perfect VNA receivers and the probe tips, and the distributive on-wafer parasitics as equivalent circuits with shunt and series elements. However, the distributive nature of on-wafer parasitics becomes significant, and the lumped equivalent circuits fail at frequencies above 50GHz.BIBLIOGRAPHY  W. Liu, X. Jin, X. Xi, et al., aquot;BSIM3V3.3 MOSFET Model - Usera#39;s Manual, aquot; University of California, Berkeley, ... Gildenblat, et al., aquot;PSP 102.3 , aquot; NXP Semiconductors, http://www.nxp.com/acrobat_download/other/models/ psp102p3_summary.pdf. ... aquot;MOS Model 11, aquot; in Compact Model Council Meeting, 2000.
|Title||:||On-water S-parameter Measurement Using Four-port Technique and Intermodulation Linearity of RF CMOS.|
|Publisher||:||ProQuest - 2008|