The solution to these problems involves enhancement of the device models used to predict circuit performance to include charge-sharing SET effects. This in turn requires high-fidelity device models, charge-sharing SET models and finally an approach to utilize the models on the standard libraries of components of which integrated circuits are constructed.134- 138.  Y. Cheng and C. Hu, MOSFET Modeling aamp; BSIM3 Usera#39;s Guide, 1999.  W. Liu and Liu, MOSFET Models for SPICE Simulation Including BSIM3v3 and BSIM4, 2001.  Spectre Simulator Usera#39;s Guide, Cadence, Inc., 2008.
|Title||:||Radiation Vulnerability Analysis Using High Efficiency Compact Modeling|
|Publisher||:||ProQuest - 2009|