This unique volume assembles the author's scientific and engineering achievements of the past three decades in the areas of (1) semiconductor physics and materials, including topics in deep level defects and band structures, (2) CMOS devices, including the topics in device technology, CMOS device reliability, and nano CMOS device quantum modeling, and (3) Analog Integrated circuit design. It reflects the scientific career of a semiconductor researcher educated in China during the 20th century. The book can be referenced by research scientists, engineers, and graduate students working in the areas of solid state and semiconductor physics and materials, electrical engineering and semiconductor devices, and chemical engineering. Contents: Defects in SemiconductorsSemiconductor Band StructuresAnalog Integrated Circuit DesignCMOS Device ReliabilityCMOS TechnologyNano CMOS Device Quantum Simulation Readership: Researchers, professors, graduate students, postdoctorates, engineers in the areas of solid state physics, semiconductor electron devices, materials science, chemical engineering, circuit design. Keywords:Semiconductors;Defects;CMOS Devices;Reliability;Si Technology;Quantum Simulations;Analog CircuitsThe circuit diagram of master-bias. The biasing voltages VDN and WDP cannot be selected independently if Eq. (10) is to be satisfied. Fig. 5 shows a circuit which will produce an output voltage WDN satisfying Eq. (10) when Vpp is given. In Fig. 5, Ion = MP KP Vos ... The -3db bandwidth is 450kHz which is fit to the filter design with cut off frequency of 3.5KHz in an audio system. The THD is measured byanbsp;...
|Title||:||Selected Semiconductor Research|
|Publisher||:||World Scientific - 2011-02-28|