Semiconductor Physics and MaterialsIntrinsic and extrinsic semiconductors, Conduction mechanism in extrinsic semiconductors, Carrier concentrations, Drift and diffusion mechanisms, Drift and diffusion current densities, Excess carriers, Recombination process, Mean carrier lifetime, Conductivity, Mobility, Mass action law, Einstein relationship.Semiconductor materials used in optoelectronic devices and modern semiconductor devices and integrated circuits - GaAs, SiGe, GaAsP.Semiconductor Diodes A brief overview of following types of diodes, their peculiarities and applications Rectifier, Signal, Switching, Power, Tunnel, Shockley, Gunn, PIN.Semiconductor P-N Junction Diode : Open circuited step graded junction, Metallurgical junctions and ohmic contacts, Depletion region, Barrier potential, Forward and reverse biased diode operation.V-I characteristic equation of diode (no derivation). Volt equivalent of temperature, Temperature dependence of V-I characteristics, DC load line. Forward and reverse dynamic resistance, Small signal and large signal diode models. Diode data sheet specifications - PIV, IFMSurge, Iav.Switching Diodes - Diode switching times, Junction capacitances.(No derivations).Field Effect Transistors An overview of different types of FETs viz. JFET, MOSFET, MESFET, Peculiarities of these types and their application areas.JFET : JFET construction, Symbol, Basic operation, V-I characteristics, Transfer characteristics ( Shockley's equation), Cut-off a Pinch-off voltages, Transconductance, Input resistance a Capacitance. Drain to source resistance. Universal JFET bias curve. Biasing arrangements for JFET - Biasing against device variation, Biasing for zero current drift. JFET as voltage controlled current source. JFET data sheet specifications - IDSS, VP, gm, rd, RDS or RD (ON).JFET Amplifiers : CS, CD, CG amplifiers. Their analysis using small signal JFET model.MOSFETsAn overview of following MOSFET types - D-MOSFET, E-MOSFET, Power MOSFET, n-MOS, p-MOS and CMOS devices. Handling precautions for CMOS devices. D and E-MOSFET characteristics and parameters, Non ideal voltage current characteristics viz. Finite output resistance, body effect, sub threshold conduction, Breakdown effects and temperature effects. MOSFET biasing, Introduction to MOSFET as VLSI device.Bipolar Junction transistor An overview of different types of BJTs - Small signal and large signal low frequency types, Switching/RF, Heterojunction types. Peculiarities of these types and their application areas.BJT Biasing and Basic Amplifier Configurations : Need for biasing BJT, DC analysis of BJT circuits, Typical junction voltages for cut-off, Active and saturation regions, Voltage divider bias and its analysis for stability factors, Small signal-low frequency h-parameter model, Variation of h-parameters with operating point, Other small signal models, Derivations for CE configuration for Ai, Ri, Ro, Avs, Avs interms of h-parameters, Comparison of performance parameters with CB and CC configurations in tabular form. Need for multistage amplifiers and suitability of CE, CC and CB configurations in multistage amplifiers, Small signal and DC data sheet specifications for BJT.Concept of frequency response, Human ear response to audio frequencies, Significance of Octaves and Dacades. The decibel unit. Square wave testing of amplifiers. Miller's theorem. Effect of coupling, bypass, junction and stray capacitances on frequency response for BJT and FET amplifiers. Concept of dominant pole. N stage cascade amplifier, Band pass of cascaded stages (effect on frequency response). Concept of GBW. (No derivations).Semiconductor Physics and MaterialsIntrinsic and extrinsic semiconductors, Conduction mechanism in extrinsic semiconductors, Carrier concentrations, Drift and diffusion mechanisms, Drift and diffusion current densities, Excess carriers, ...
|Title||:||Semiconductor Devices & Circuits|
|Publisher||:||Technical Publications - 2008-01-01|