... by Johnson in 1957, 9 by Quilliet and Gosar in 1960, 10 and by Goodman in 1961.11 It was Goodmana#39;s SPV approach that led to the first full-scale ... Through this relatively simple, contactless method, they were able to detect cracked furnace tubes, contaminated solid source diffusion ... 9.1 Schematic illustration of the various material/device parameters measurable with charge/ probe/light techniques.
|Title||:||Semiconductor Material and Device Characterization|
|Author||:||Dieter K. Schroder|
|Publisher||:||John Wiley & Sons - 2006-02-10|