These three day symposia were designed to provide a link between specialists from university or industry who work in different fields of semiconductor optoelectronics. Symposium A dealt with topics including: epitaxial growth of III-V, II-VI, IV-VI, Si-based structures; selective-area, localized and non-planar epitaxy, shadow-mask epitaxy; bulk and new optoelectronic materials; polymers for optoelectronics. Symposium B dealt with III-V epitaxial layers grown by low temperature molecular beam epitaxy, a subject which has undergone rapid development in the last three years.be extended to the results of melt growth by Suzuki and Akai  and Parsey et al . . Similar results are also ... Figure 1 shows a schematic drawing of the equipment for annealing under As vapour pressure. The As vapour pressure appliedanbsp;...
|Title||:||Semiconductor Materials for Optoelectronics and LTMBE Materials|
|Author||:||J.P. Hirtz, C. Whitehouse, H.P. Meier, H.J. von Bardeleben, M.O. Manasreh|
|Publisher||:||Elsevier - 2013-10-22|