Explains the circuit design of silicon optoelectronic integrated circuits (OEICs), which are central to advances in wireless and wired telecommunications. The essential features of optical absorption are summarized, as is the device physics of photodetectors and their integration in modern bipolar, CMOS, and BiCMOS technologies. This information provides the basis for understanding the underlying mechanisms of the OEICs described in the main part of the book. In order to cover the topic comprehensively, Silicon Optoelectronic Integrated Circuits presents detailed descriptions of many OEICs for a wide variety of applications from various optical sensors, smart sensors, 3D-cameras, and optical storage systems (DVD) to fiber receivers in deep-sub-I¼m CMOS. Numerous detailed illustrations help to elucidate the material.The circuit diagram of a pixel is given in Fig. 6.15. Each pixel consists of an a-Si: H photodetector, eight MOSFETs and one integration capacitance C\^ . C\M is discharged by the photocurrent. The inverter M2, M3 and the source followeranbsp;...
|Title||:||Silicon Optoelectronic Integrated Circuits|
|Publisher||:||Springer Science & Business Media - 2004-01-12|