This book gives a fascinating picture of the state-of-the-art in silicon photonics and a perspective on what can be expected in the near future. It is composed of a selected number of reviews authored by world leaders in the field and is written from both academic and industrial viewpoints. An in-depth discussion of the route towards fully integrated silicon photonics is presented. This book will be useful not only to physicists, chemists, materials scientists, and engineers but also to graduate students who are interested in the fields of microphotonics and optoelectronics.0.76 0.75 Ega#39;(hh) n BulkGe ac Ge on Si o Ge/Si/C54-TiSi 0.00 0.05 0.10 0.15 0.20 0.25 0.30 In-plane Strain (%) Fig. 15. Left: Schematic diagram showing the effect of biaxial stress on the band structure of Ge. ... The speed of a photodetector is mainly determined by two factors: RC delay and carrier transit time. The RC delay anbsp;...
|Author||:||Lorenzo Pavesi, David J. Lockwood|
|Publisher||:||Springer Science & Business Media - 2004-03-04|