This book reviews research on single-electron devices and circuits in silicon. These devices provide a means to control electronic charge at the one-electron level and are promising systems for the development of few-electron, nanoscale electronic circuits. The book considers the design, fabrication, and characterization of single-electron transistors, single-electron memories, few-electron transfer devices such as electron pumps and turnstiles, and single-electron logic devices. A review of the many different approaches used for the experimental realisation of these devices is provided and devices developed during the author''s own research are used as detailed examples. An introduction to the physics of single-electron charging effects is included. Sample Chapter(s). Chapter 1: Introduction (301 KB). Contents: Introduction; Single-Electron Charging Effects; Single-Electron Transistors in Silicon; Single-Electron Memory; Few-Electron Transfer Devices; Single-Electron Logic Circuits. Readership: Researchers, academics, and postgraduate students in nanoelectronics, nanofabrication, nanomaterials and nanostructures, quantum physics and electrical a electronic engineering.Conversely, SET2 is biased along a section of the stability diagram, from Vg1 to Vg2, where the Coulomb blockade region reduces with Vin. Therefore, as Vin increases from Vg1 to Vg2, the SET drain-source current Ids1 increases and theanbsp;...
|Title||:||Single-electron Devices and Circuits in Silicon|
|Author||:||Zahid Ali Khan Durrani|
|Publisher||:||World Scientific - 2009-11-13|