Section 1 addresses the most recent developments in processes at the semiconductor-solution interface include etching, oxidation, passivation, film growth, porous semiconductor formation, electrochemical, photoelectrochemical, electroluminescence and photoluminescence processes, electroanalytical measurements and related topics on both elemental and compound semiconductors. Section 2 addresses the most recent developments in compound semiconductors encompassing advanced devices, materials growth, characterization, processing, device fabrication, reliability, and related topics.I. INTRODUCTION Recently, for safety consideration and progression in environmental quality, the uses of hydrogen sensors ... (3) low deep level traps and negligible DX center related drawbacks, and (4) small surface recombination (11, 12).
|Title||:||State-of-the-Art Program on Compound Semiconductors 46 (SOTAPOCS 46) -and- Processes at the Semiconductor/Solution Interface 2|
|Publisher||:||The Electrochemical Society - 2007-01-01|