In recent years, new applications in Terahertz (THz) imaging, spectroscopy, ranging and telecommunication had initiated huge research interest in THz emitting devices. There were few suitable sources available, however, in the THz frequency range (1-10 THz). Thus more powerful terahertz sources were strongly desired, especially with higher operating temperatures. This dissertation described two THz emitting devices based on Si and SiC materials that demonstrated much higher operating temperatures than what was previously published.LabVIEW 6 was used as the platform for developing data acquisition and control software. ... Manual.vi 2. Purge.vi 3. ExpansionChamberEtch.vi 4. XeF2_Etch_Var-Pressure.vi Manual.vi (Figure 5.7) is a program that performs the function ofanbsp;...
|Title||:||The Fabrication and Characterization of High Temperature Terahertz Emitters, and DNA-sensitive Transistors Based on Silicon-germanium and Silicon Carbide Materials|
|Publisher||:||ProQuest - 2007|