This book presents a new and promising technique to grow single crystalline compound semiconductor materials with defined stoichometry. The technique is based on the high-precision experimental determination of the boundaries of the single-phase volume of the solid in the pressure-temperature-composition P-T-X phase space. Alongside test results obtained by the author and his colleagues, the P-T-X diagrams of other important materials (e.g., III-V, V-VI semiconductors) are also discussed.The diagrams of the type, Fig. 27, are of substantial applied interest, in particular, in connection with the problem of stabilizing cubic zirconia because some of the ZrOi - MmOn systems are of this type. The relevant details will be given in aanbsp;...
|Title||:||Thermodynamic Basis of Crystal Growth|
|Publisher||:||Springer Science & Business Media - 2001-11-20|